LAUSR

Abstract Composition dependence of structural, electrical and optical properties of binary Selenium-Antimony films was investigated for electrical and optical nonvolatile memories with low power and high speed. For preferred Sb 51 Se 49 and Sb 47 Se 53 films, the temperature for 10-year data retention can be up to 125.9 and 141.8 °C. Both amorphous and crystalline resistivities increase with Se content. The resistance ratio between two states maintain almost 3 orders of magnitude. Hall mobility and carrier concentration increases with the decrease in Se content. The microstructure of annealed Sb-Se films exhibits uniform distribution of crystallized phases with orthorhombic Sb 2 Se 3 and hexagonal Sb. The high ON/OFF ratios of both refractive index ( n ) and extinction coefficient ( k ) between the amorphous and crystalline states alloys Sb-Se film to be favorable for the optical storage in spectral region 1.7–25 μm.