LAUSR

Abstract Cu2O films were deposited on the sapphire substrates by pulsed laser deposition. The effects of nitrogen plasma treatment on the properties of the Cu2O films were studied. A phase transition from pure Cu2O to mixture of Cu2O and Cu and a change from p to n-type conduction were observed after the films being treated for different durations. The optical band gap of the films varied from 2.51 to 2.56 eV. Phase-pure n-type Cu2O film having a very smooth surface, a low resistivity of 20.50 Ω cm and a moderate Hall mobility of 3.76 cm2·v−1·s−1 was obtained for the 10 min plasma treated sample. The n-type conduction mechanism was discussed and clarified.