LAUSR

Abstract Improved memory performance of Er:TiO2 thin film (TF) device as compared to the undoped TiO2 TF device is discussed. Capacitance–voltage (C-V) and conductance-voltage (G-V) analysis were performed for various high frequencies ranging from 300 KHz to 5 MHz. C-V hysteresis for sweeping voltages ranging from ±2 V to ±10 V and I-V hysteresis for 100 DC cycles were obtained at room temperature. At 1 MHz frequency, Er:TiO2 TF device depicted a low interface trap density (Dit) of ∼8.47 × 1012 eV−1cm−2 and an enhanced memory window of ∼3.068 V at ±10 V sweeping voltage as compared to the undoped device. Flat band voltage shift (ΔVFB) was extracted from CV hysteresis and electron trapping and hole trapping density (NSTD) were calculated for the devices. Furthermore, endurance and retention studies were accomplished in order to investigate the memory performance and reliability of the device with time and verified that doping of TiO2 with Er improved its data storage ability.