Abstract Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issues being the macroscopic lateral Mn… Click to show full abstract
Abstract Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issues being the macroscopic lateral Mn distribution and the absolute values of Mn concentration x. We report on resonantly enhanced UV Raman scattering studies of high quality Ga1−xMnxN layers grown on GaN templated sapphire by molecular beam epitaxy with 4
               
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