LAUSR

Abstract We report a comprehensive study of magneto-transport properties in MoSi2 bulk and thin films. Textured MoSi2 thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi2 single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi2 thin films is significantly low and nearly independent of the temperature, which is important for electronic devices.