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Abstract This paper reports a very fine-pattern, flexible, self-powered, and cost-effective silicon carbide single nanowire ultraviolet photodetector (SiCNW-UVPD) with a high sensitivity of 1756%, a responsivity of 0.17 A/W, and a… Click to show full abstract
Abstract This paper reports a very fine-pattern, flexible, self-powered, and cost-effective silicon carbide single nanowire ultraviolet photodetector (SiCNW-UVPD) with a high sensitivity of 1756%, a responsivity of 0.17 A/W, and a shallow dark current of ~0.08 pA. The device exhibits an excellent detectivity value of 7.2 × 1010 cm.Hz1/2. W−1 and external quantum efficiency (EQE) of 83% without the need of any external power (0 V) under 254 nm ultraviolet light. The remarkable performance parameters having the highest reported sensitivity and responsivity values for a self-powered SiC nanowire-based photodetector along with very small size and cost-efficiency could offer unique opportunities in new generation, flexible, self-powered nanoscale optoelectronics.
Journal Title: Journal of Alloys and Compounds
Year Published: 2021
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