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Facile fabrication of MgZnO/ZnO composites for high performance thin film transistor

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Abstract The disadvantages of the low on/off current ratio (Ion/off) and high leakage current in ZnO-based thin-film transistors (TFTs) impede its development to realize industrial production for replacing Si-TFTs. In… Click to show full abstract

Abstract The disadvantages of the low on/off current ratio (Ion/off) and high leakage current in ZnO-based thin-film transistors (TFTs) impede its development to realize industrial production for replacing Si-TFTs. In this work, we fabricated a high performance MgZnO/ZnO dual-active-layer TFTs (DAL-TFTs) through systematic optimize the synthesis conditions. The optimized Mg0.2Zn0.8O/ZnO TFTs presents high mobility of 21.1 cm2V-1s-1 with a high Ion/off of 1.5×108, which is much higher than that of ZnO-based TFTs. The results indicate that high carrier concentration ZnO close to the insulation layer ensures the excellent mobility of MgZnO/ZnO DAL-TFTs and low carrier concentration MgZnO layer can reduce the off-state current of the device, and increase the switching ratio of the device. Our results indicate the MgZnO/ZnO composite is a promising candidate for high performance TFTs and other electronic devices.

Keywords: high performance; mgzno zno; thin film; zno

Journal Title: Journal of Alloys and Compounds
Year Published: 2021

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