LAUSR

Abstract For the past few decades Cadmium chalcogenides attracted many researchers due to its interesting band gap nature, structure, electrical, optical and photoelectrochemical properties. The objective of the present work is to determine the modified features of cadmoselite thin film gown by simple, low cost, low temperature electrodeposition technique. Cadmoselite thin films were deposited on Indium doped Tin Oxide substrate. X-ray diffraction results reported that the deposited films were found to be polycrystalline nature with hexagonal structure. The structural parameters viz., crystallite size, rms microstrain, dislocation density and stacking fault probability were determined for the deposited films. Surface morphology along with film composition reported that the deposited films have smooth surfaces with well defined stoichiometry. Optical properties such as transmittance, absorbance and reflectance measurements showed that the deposited films found to exhibit maximum absorbance from the violet to blue region. The band gap value of the deposited films is found to be 1.76 eV. The parameters such as refractive index, extinction coefficient, optical conductivity, real and imaginary dielectric constants were estimated.