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Abstract A method of concentration of gas impurities contained in a melt into sealed cavities in a crystal has been proposed for the first time. This makes it possible to… Click to show full abstract
Abstract A method of concentration of gas impurities contained in a melt into sealed cavities in a crystal has been proposed for the first time. This makes it possible to determine the amount of gases dissolved in the melt during crystallization by the Edge-defined Film-fed Growth (EGF) technique and the gas pressure in cavities inside the crystals. We also measure the composition of gas inclusions in crystallized melts of Al 2 O 3 , Y 3 Al 5 O 12 and Bi 4 Ge 3 O 12 and discuss it in connection with crystal growth procedure and quality of crystals.
Journal Title: Journal of Crystal Growth
Year Published: 2017
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