Abstract We investigated the carrier concentration and Hall mobility of epitaxial β-FeSi 2 films grown on semi-insulating 4H-SiC(001) single crystals to clarify the contribution of the microstructures to their electrical… Click to show full abstract
Abstract We investigated the carrier concentration and Hall mobility of epitaxial β-FeSi 2 films grown on semi-insulating 4H-SiC(001) single crystals to clarify the contribution of the microstructures to their electrical conduction properties. These electrical conduction properties of epitaxial β-FeSi 2 films were changed by their grain size. The Hall mobility of the films consisting of the grains of 250–350 nm in size was limited by the grain boundaries, while it was not limited by grain boundaries for the films consisting of the coarse grains of 20–40 µm in size but limited by defects inside the grains.
Journal Title: Journal of Crystal Growth
Year Published: 2017
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