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Abstract We carried out molecular beam epitaxial (MBE) growth of MnAs/InAs hybrid structure on GaAs(1 1 1)B for spin field effect transistor (spin-FET) applications. We observed good alignment of hexagonal MnAs and… Click to show full abstract
Abstract We carried out molecular beam epitaxial (MBE) growth of MnAs/InAs hybrid structure on GaAs(1 1 1)B for spin field effect transistor (spin-FET) applications. We observed good alignment of hexagonal MnAs and cubic InAs epitaxial layers with GaAs(1 1 1)B by X-ray diffraction (XRD) measurement. We observed smooth surface morphology of MnAs/InAs by atomic force microscopy (AFM), and also observed maze-like magnetic structure by magnetic force microscopy (MFM). We observed easy and hard magnetizations in-plane and out-of-plane directions similar to MnAs/GaAs(1 1 1)B using superconducting quantum interference device (SQUID) magnetometer. We believe that the MnAs/InAs hybrid structure on GaAs(1 1 1)B can be a base structure for spin-FETs.
Journal Title: Journal of Crystal Growth
Year Published: 2017
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