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Generation of 320 mW at 10.20 μm based on CdSe long-wave infrared crystal

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Abstract CdSe single crystal, with the sizes of ∼54 mm in diameter and ∼25 mm in length, was grown by a high pressure vertical gradient freeze (HPVGF) technique using (0 0 1)-oriented seed. The… Click to show full abstract

Abstract CdSe single crystal, with the sizes of ∼54 mm in diameter and ∼25 mm in length, was grown by a high pressure vertical gradient freeze (HPVGF) technique using (0 0 1)-oriented seed. The CdSe crystal was characterized with transmission spectrophotometer. The transmission spectra showed that the infrared transmission was above 68% and the mean absorption coefficient was 0.041 cm−1 in the range of 2.5–20 μm. Using fabricated CdSe crystal with the dimensions of 6 mm × 10 mm × 44 mm, we demonstrated an optical parametric oscillator (OPO) pumped by a 2.05 μm Ho:YLF laser at a pulse repetition frequency of 5 kHz. Up to 320 mW output was obtained at the idler wavelength of 10.20 μm with a pump power of 18.06 W. 320 mW at 10.20 μm, to our knowledge, was the highest power obtained with a 2.05 μm laser-pumped CdSe OPO.

Keywords: cdse long; based cdse; generation 320; cdse; 320 based; long wave

Journal Title: Journal of Crystal Growth
Year Published: 2018

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