LAUSR

Abstract The negative charged nitrogen vacancy center in diamond is ideal sensitive detectors for quantum measure applications. Raman active phonon and inelastic light scattering in face-centered cubic diamond/Si(1 0 0) films were primarily studies by Raman spectra in various scattering configurations and NV concentration. The fabricated diamond (1 0 0) thin films were successfully epitaxial grown on Si(1 0 0) substrate using MPCVD. The Raman scattering spectrum of diamond/Si(1 0 0) hetero-structure with different thickness nanostructure is present to investigate spin orbital transport dynamics of phase transition. Diamond hetero-junction experiments were carried out at different conditions such as temperature range of 15–300 K and concentration of NV. The results show a strong peak at 1332 cm−1 of D mode indicates the E2g of diamond, as well as the peak 1550 cm−1 of a broad band F2g symmetry G mode which corresponds to the nano-diamond. The disordered graphitic carbon is formed by disordered SP2 hybridization. The 1132 cm−1 and 1480 cm−1 are corresponding with hydrogen bonding within film grain boundaries. The transfer of diamond sp2 content extracted from C C peak and converted to the sp3 spin related effect. The diamond/Si(1 0 0) PDOS indicated the spin-related couple of SP3, and p and d orbital hybridization. The research leads to a better understanding of the Raman active spectra and inelastic light scattering of diamond/Si(1 0 0) films and offers guidelines for better orbital hybridization material design in deep ultra-violet photo-sensor, gyroscopes, field effect transistors (FET) using diamond hetero-structure and high-k oxide gate structure, magnetometer, thermometer, and optical switching micro-electromechanical system (MEMS) devices.