LAUSR

Abstract In this study, we verified the potential of Cr-rich Cr-Si solvent for the rapid solution growth of 4H-SiC using three different compositional alloys to introduce a perspective of the solvent design for SiC crystal growth. Based on the temperature dependencies of C solubility in Cr-Si alloys, the Cr-rich Cr-Si solvent was found to have a larger C supersaturation (ΔXC) and a smaller relative supersaturation (σ), which accounted for approximately thrice and less than 1/10, respectively, than those of the Si-rich solvent. Because of the large ΔXC, the sizable SiC growth rates of 1220 and 1310 μm h−1 were obtained at 1933 K using the Cr-27.5 mol%Si and Cr-45 mol%Si solvents, respectively. The polytype inclusion of 3C-SiC significantly decreased when the Cr-27.5 mol%Si solvent was used in comparison with the Cr-45 mol%Si and Cr-60 mol%Si solvents because of its small σ. The obtained maximum growth rates using Cr-rich solvents were more than six times higher than those obtained using the Si-rich solvent. Hence, the high potential of the Cr-rich Cr-Si solvent in achieving a more rapid growth of 4H-SiC than the conventional Si-rich Cr-Si solvent was clarified.