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Crystal growth and characterization of CaTe: A potential topological material

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Abstract High-quality single crystals of CaTe are grown using the high temperature solution-growth method employing Te as the flux. The grown crystals were characterized using single crystal and powder X-ray… Click to show full abstract

Abstract High-quality single crystals of CaTe are grown using the high temperature solution-growth method employing Te as the flux. The grown crystals were characterized using single crystal and powder X-ray diffraction, X-ray Laue diffraction, scanning electron microscope and the energy dispersive X-rays analysis for composition mapping. CaTe is an insulator, crystalizing with a cubic NaCl-type of structure. The low-temperature specific heat C p of CaTe exhibits a peak in C p / T 3 versus temperature T plot near T = 20 K with a conspicuous absence of the Debye T 3 regime down to T = 2 K.

Keywords: crystal growth; potential topological; cate potential; growth characterization; growth; characterization cate

Journal Title: Journal of Crystal Growth
Year Published: 2020

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