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Abstract The epitaxial growth of complex heterostructures requires in-situ techniques for detection and control of the growth parameters. In-situ continuous spectral reflectivity measurements are used during molecular beam epitaxial growth… Click to show full abstract
Abstract The epitaxial growth of complex heterostructures requires in-situ techniques for detection and control of the growth parameters. In-situ continuous spectral reflectivity measurements are used during molecular beam epitaxial growth to measure the substrate temperature and achieve close growth control on complex structures such as quantum-cascade lasers and microcavities. The corresponding utilized modes of operations are illustrated in detail and are found to enhance the reproducibility and precision of complex growth runs.
Journal Title: Journal of Crystal Growth
Year Published: 2021
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