Abstract The effect of the growth conditions on halide vapor phase epitaxy of In2O3 on sapphire (0001) substrates was investigated. Only the most thermally stable phase c-In2O3 grows at growth… Click to show full abstract
Abstract The effect of the growth conditions on halide vapor phase epitaxy of In2O3 on sapphire (0001) substrates was investigated. Only the most thermally stable phase c-In2O3 grows at growth temperatures of 400 to 1000 °C. The growth rate increased as the growth temperature increased up to 700 °C, and layers with rough surfaces and a preferred (100) orientation were grown. Above 700 °C, the growth rate became constant, the preferential orientation changed to (111), and layers with smooth surfaces were grown. At 1000 °C, the volume fraction of the (111)-oriented domains in the grown layer reached 99.0%, although there were in-plane twins rotated by 180°. The growth rate also increased as the input partial pressure of the InCl or O2 source gas was increased, and a high growth rate exceeding 10 μm/h was found. The layer grown at 1000 °C was of high purity and incorporated no impurities other than Cl. Optical transmission measurements of this layer showed high optical transmittance at energies below the optical gap of 3.47 eV.
               
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