LAUSR

Abstract Microstructure, temperature and frequency dependent dielectric and energy storage properties of Ba 0.3 Sr 0.475 La 0.12 Ce 0.03 Ti 1−x Mn x O 3 (x = 0 − 0.005) have been investigated with X-ray diffractometer, and scanning electron microscope, broad band dielectric spectrometer and ferroelectric analyzer. The doping of Mn substantially decreased the dielectric loss, but made some of Ce 3+ be oxidized to Ce 4+ entering into B-site, which resulted in the formation secondary phases. For the Mn-doped composition, extremely low dielectric loss (10 −5 order of magnitude at 10 kHz) could be obtained at room temperature. The relaxation mechanism at low temperature is of the dipole type for the undoped composition and that at high temperature (>500 K) is governed by the trap controlled ac conduction, respectively. The energy storage properties were improved by the doping with Mn due to the increase of insulation. Maximum energy density of 0.953 J/cm 3 could be obtained for x = 0.003 composition with the BDS of 247 kV/cm and efficiency of 93%.