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Abstract The previous studies showed that the SiC layer with sub-micro grain structure can prevent fission products release more effectively. Usually, the silicon carbide (SiC) layer in TRISO (Tristructural isotropic)… Click to show full abstract
Abstract The previous studies showed that the SiC layer with sub-micro grain structure can prevent fission products release more effectively. Usually, the silicon carbide (SiC) layer in TRISO (Tristructural isotropic) particles was deposited at 1500–1600 °C by spouted bed chemical vapor deposition (CVD) from methyltrichlorosilane in H2 environment. It has grain size in micro scale (1–10 μm). In this work, we proposed a novel method for preparation of sub-micro grained SiC layer by adjusting the deposition parameters. The as-prepared SiC layer had grain size about 200 nm and pure phase (β-SiC). The fined grain SiC layer also exhibited higher mechanical property than SiC layer with larger grain size.