Abstract To improve the oxidation resistances of SiC coated C/C composites by a pack cementation (PC) method at high temperature and alleviate the siliconization erosion of molten silicon on C/C… Click to show full abstract
Abstract To improve the oxidation resistances of SiC coated C/C composites by a pack cementation (PC) method at high temperature and alleviate the siliconization erosion of molten silicon on C/C substrate during the preparation of SiC coating, a SiO2-SiC reticulated layer with SiC nanowires was pre-prepared on C/C composites through combined slurry painting and thermal treatment before the fabrication of SiC coating. The presence of porous SiO2-SiC layer with SiC nanowires was beneficial to fabricate a compact and homogeneous SiC coating resulting from synergistic effect of further reaction between SiO2 and pack powders and the reinforcement of SiC nanowires. Therefore, the results of thermal shock and isothermal oxidation tests showed that the mass loss of modified SiC coating was only 0.02 % after suffering 50-time thermal cycles between room temperature and 1773 K and decreased from 5.95 % to 1.08 % after static oxidation for 49.5 h in air at 1773 K. Moreover, due to the blocking effect of SiO2-SiC reticulated layer on siliconization erosion during PC, the flexural strength of SiC coated C/C composites with SiO2-SiC reticulated layer increased by 64.8 % compared with the untreated specimen.
               
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