LAUSR

Abstract We study defect states in Eu-doped Y 3 Al 5 O 12 powder by thermally stimulated luminescence (TSL) in the temperature range 77–500 K. We identify the main TSL peaks, analyze them by the initial rise technique and calculate the characteristic parameters of the corresponding traps. Tunneling of charge carriers between traps and recombination centers up to about 265 K is observed and discussed. Recent study established the presence of both Eu 2+ and Eu 3+ centers in the studied Y 3 Al 5 O 12 powder. The TSL spectra show that Eu 2+ and Eu 3+ centers compete in the charge carrier capture. We show that previously observed Eu 2+ luminescence quenching is due to both classical thermal quenching and thermal ionization of the Eu 2+ excited state. We model the temperature dependence of the delayed recombination intensity.