LAUSR

Abstract We have fabricated the europium (Eu) doped Ga 2 O 3 thin films on GaAs substrate by using pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and optical properties are systematically investigated. We demonstrate that the Eu contents in Ga 2 O 3 films can be controlled by adjusting the Eu contents in the targets. Moreover, all the films exhibited monoclinic Ga 2 O 3 structure and smooth surface. We also clearly observe intense red emissions at 611 nm for the Eu doped Ga 2 O 3 films. It is believed that this work paves the way for the development of GaAs-based red electroluminescence devices by using wide bandgap Ga 2 O 3 as the host materials for Eu 3+ ions.