Abstract SrB2Si2O8: Tb3+ and SrB2Si2O8: Ce3+, Tb3+ phosphors were synthesized through conventional high temperature solid state reaction method. Under near ultraviolet (NUV) excitation of 377 nm, the emission peaks of the… Click to show full abstract
Abstract SrB2Si2O8: Tb3+ and SrB2Si2O8: Ce3+, Tb3+ phosphors were synthesized through conventional high temperature solid state reaction method. Under near ultraviolet (NUV) excitation of 377 nm, the emission peaks of the SrB2Si2O8: Tb3+ green phosphor located at 489, 544, 585 and 623 nm corresponding to Tb3+ ions energy level transition of 5D4 excitation state to 7F6, 7F5, 7F4 and 7F3 ground states, respectively. The optimal concentration of Tb3+ ions is 11at.%, and the concentration quenching mechanism can be interpreted by the dipole-quadrupole interaction of Tb3+ ions. For the Sr1-xB2Si2O8: Ce3+, xTb3+ phosphors, the maximum luminescence intensity is 21 times higher than that of the single doped Tb3+, which originates from the energy transfer of Ce3+ to Tb3+ ions. The energy transfer efficiency is calculated to be 79.7%, which is caused by the dipole-dipole resonant type. The CIE coordinates of SrB2Si2O8: Ce3+, Tb3+ phosphors change from blue (0.167, 0.071) to green (0.241, 0.546). When the temperature reaches 210 °C, the luminescence intensity reaches 72.20% of the initial value, indicating that the materials have good thermal stability. The above consequences demonstrate that the SrB2Si2O8: Ce3+, Tb3+ phosphors can be used as a candidate for a promising green luminescent phosphor in ultraviolet excited W-LEDs.
               
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