LAUSR

Abstract The heat generated during sliding can cause temperature rise at the interface, of which the flash temperature even can reach several thousand degree at some special locations. This may lead to sintering of surface, oxidation, even recrystallization and phase change, thereby affect the material characteristic and tribology behaviors. However, it is difficult to accurately measure the transient temperature of interface due to its invisibility and high-speed movement in some environments. In this study, the double line method of Atomic emission spectrometry (AES) was used to estimate the interface temperature during the sliding between and SiO2 crystal materials by measuring the spectral intensity of triboluminescence (TL). The emission temperature of photons, which can quantitatively evaluate the transient interface temperature, was calculated with two spectral lines whose wavelength are 336.58 nm and 374.595 nm by an intensity detection system. Based on the results, the temperatures of the interface during sliding were derived to be 3356–4377 K. In addition, the effect of crystallographic orientation on the emission temperature of photons during the sliding process was analyzed. It was indicated that the photon emission temperature decreases with increasing TL intensity.