LAUSR

Abstract For comfortable interior and mood lighting, warm and natural white light with excellent color version is indispensable. Here, we reported a main progress that in-situ generation of V-pits in InGaN/GaN layers intentionally to realize the emission spectra cover all three primary colors of red, blue and green (RGB). By combing sidewall multiple quantum wells (MQWs) of V-pits with thinner thickness and lower In content and InGaN quantum dots (QDs) in InGaN/GaN MQWs, the broad wavelengths range from blue to red light emission have been obtained. Our future work will focus on growth optimization. It is important to note that the integral emission intensity of the InGaN/GaN MQWs improved as the density of V-pits increase, because of the sidewall MQWs have enhanced the emission region and the light coupling, except preventing the carriers to arrive the dislocation center. Therefore, we speculate that the method is alternative to realize the phosphor free InGaN based white light emitting diodes (LEDs) in future.