Abstract We report the preparation method and broadband near-infrared (NIR) emission spectral of nickel ion-doped Zn7Sb2O12 crystals in an easy way. Herein, we present the NIR properties of Ni2+ doped… Click to show full abstract
Abstract We report the preparation method and broadband near-infrared (NIR) emission spectral of nickel ion-doped Zn7Sb2O12 crystals in an easy way. Herein, we present the NIR properties of Ni2+ doped Zn7Sb2O12 nanocrystals, and possesses the ultrabroad band emission spectra ranging from 1100 to 1600 nm which originated from the 3T2g (3F) → 3A2g (3F) transition. The analysis shows that the Ni2+ ions has been well incorporated into Zn7Sb2O12 lattice and the emission with high stability despite the mixed phases or with the different fabrication times. TMIs incorporated into new lattice have evoked widely interesting in many fields, but rigorous fabrication processes and the probability of presence of heterogeneous phases often limit their usage and further research. The fabrication process here is quite facial without strict valence state control and the whole synthesis period only needs 20min. This open a new gateway for TMI doped nanocrystals applied to a variety of areas in the future.
               
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