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Irreversibility in room temperature current–voltage characteristics of NiFe2O4 nanoparticles: A signature of electrical memory effect

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Abstract Room temperature I – V characteristics study, both in presence and absence of magnetic field (1800 Oe), has been performed on NiFe 2 O 4 nanoparticles, having different particle size… Click to show full abstract

Abstract Room temperature I – V characteristics study, both in presence and absence of magnetic field (1800 Oe), has been performed on NiFe 2 O 4 nanoparticles, having different particle size ( Ф ~14, 21 and 31 nm). Our experiments on these nanoparticles provide evidences for: (1) electrical irreversibility or hysteretic behaviour; (2) positive magnetoresistance and (3) magnetic field dependent electrical irreversibility or hysteresis in the sample. “ Hysteretic ” nature of I–V curve reveals the existence of electrical memory effect in the sample. Significantly, such hysteresis has been found to be tuned by magnetic field. In order to explain the observed electrical irreversibility, we have proposed a phenomenological model on the light of induced polarization in the sample. Both the positive magnetoresistance and the observed magnetic field dependence of electrical irreversibility have been explained through magnetostriction phenomenon. Interestingly, such effects are found to get reduced with increasing particle size. For NiFe 2 O 4 nanoparticles having Ф =31 nm, we did not observe any irreversibility effect. This feature has been attributed to the enhanced grain surface effect that in turn gives rise to the residual polarization and hence electrical memory effect in NiFe 2 O 4 nanoparticles, having small nanoscopic particle size.

Keywords: memory effect; electrical memory; room temperature; irreversibility; effect

Journal Title: Journal of Magnetism and Magnetic Materials
Year Published: 2017

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