LAUSR

Abstract We study the evolution of the magnetic field-induced switching between the stable domain configurations of permalloy nanoring structures, when magnetic nano-wires are attached to them. Magnetoresistance measurements were performed on such devices for two configurations of the attached nano-wires: (i) when they are at diametrically opposite ends of the nanoring, and (ii) when the nanowires are at an obtuse angle with respect to each other. During the measurements, the direction of application of the in-plane magnetic field is varied to understand the switching properties of the devices. Micromagnetic simulations were carried out in order to understand the domain configuration and reversal mechanism. We show that due to the nature of domain walls created by the presence of the nano-wires in the obtuse configuration, a vortex state can be stabilized in the nano-ring. We extended our studies to various nanoring devices with different widths while keeping a constant thickness.