Abstract Two sets of Cobalt-doped (1–10% at) TiO 2 thin films, for different molar concentrations of the Ti precursor (0.3 and 0.5 mol/L), have been deposited onto Si substrates by combining… Click to show full abstract
Abstract Two sets of Cobalt-doped (1–10% at) TiO 2 thin films, for different molar concentrations of the Ti precursor (0.3 and 0.5 mol/L), have been deposited onto Si substrates by combining the Sol Gel process and the Spin Coating technique. The structure of the samples was studied by X-ray reflectivity (XRR) and X-ray diffraction (XRD) and their magnetic properties were analyzed by magnetization measurements as a function of the applied magnetic field. The XRR results provided the thickness and interfacial roughness of the films, while XRD patterns revealed the crystalline phases and lattice parameters. Room temperature ferromagnetic behaviour was observed for some of the atomic Co concentrations by the magnetization measurements. This behaviour has been correlated to the crystalline phases, which were found to be modified by both the molar ratio of Ti precursor and the concentration of the Co dopant. A suppression of ferromagnetism is observed for some atomic Co fractions and it was attributed to the presence of secondary crystalline phases.
               
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