LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Modification of spin-obit torques using the Ta oxidation buffer layer

Photo by henrylim from unsplash

Abstract We carefully investigated the influence of the thickness of TaOx buffer layer on the perpendicular magnetic anisotropy and spin-obit torques in Pt/Co/Pt trilayers. Using the first and second harmonic… Click to show full abstract

Abstract We carefully investigated the influence of the thickness of TaOx buffer layer on the perpendicular magnetic anisotropy and spin-obit torques in Pt/Co/Pt trilayers. Using the first and second harmonic Hall voltage measurements, we found that both the perpendicular magnetic anisotropy field and the damping-like field are sensitive to the thickness of the TaOx layer. The damping-like torque with various TaOx thickness changes synchronously with the resistance of the device, which can be explained by the buffer TaOx layer induced current distribution changes in the bottom and top Pt layers. Through the current-induced magnetization switching measurement, we found that an optimal switching efficiency can be obtained by tuning the thickness of TaOx buffer layer.

Keywords: obit torques; buffer layer; layer; thickness; taox; spin obit

Journal Title: Journal of Magnetism and Magnetic Materials
Year Published: 2019

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.