Abstract The MnP thin films were grown on Si (1 0 0) substrates at 300 and 400 °C using molecular beam epitaxy (MBE). The films crystallize in an orthorhombic structure. FE-SEM images indicated… Click to show full abstract
Abstract The MnP thin films were grown on Si (1 0 0) substrates at 300 and 400 °C using molecular beam epitaxy (MBE). The films crystallize in an orthorhombic structure. FE-SEM images indicated that both films are composed of vertically aligned MnP nanorods. However, the density of the nanorods in the film grown at 400 °C is higher than that grown at 300 °C, leading to a considerable decrease of resistivity in this sample. Both films showed a ferromagnetic behavior, but the Curie temperature increased from 275 K for the film grown at 300 °C to 325 K for the film grown at 400 °C. Anomalous Hall effect (AHE) and negative magneto-resistance (MR) were observed in the films. While both films exhibited a metallic behavior, a higher thermoelectric power factor (PF) was achieved for the film grown at 400 °C.
               
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