Abstract The effect of the tensile stress applied during ion beam synthesis of thin silicide films on magnetic properties is studied. The magneto-optical Kerr effect revealed the existence of both… Click to show full abstract
Abstract The effect of the tensile stress applied during ion beam synthesis of thin silicide films on magnetic properties is studied. The magneto-optical Kerr effect revealed the existence of both magnetically anisotropic and isotropic regions in the synthesized thin film. In the isotropic regions, the increase in the coercive force is observed as the external tensile stresses decrease. It is assumed that in this area stress relaxation and the subsequent growth of the finely dispersed silicide phase occur. In accordance with the Herzer model, large values of the coercive force are associated with relatively large crystallite sizes. In the magnetically anisotropic region, the anisotropy field is proportional to the stress applied during implantation that indicates the magnetoelastic nature of the induced anisotropy.
               
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