LAUSR

Abstract We investigated a voltage-control spintronics memory (VoCSM) with a shunt-free design process and W spin-Hall electrode. We successfully reduced the write current to 62 μA at a 5-ns write pulse (48 μA at a 20-ns write pulse), utilizing a high spin-Hall efficiency by developing the shunt-free design process and optimized W spin-Hall electrode. Moreover, the device was very reliable, exhibiting properties such as a low write error rate ( 1 × 1012 cycles). The spin-Hall MRAM and VoCSM with the shunt-free design process and W spin-Hall electrode could lead to high-speed nonvolatile memory with low power consumption and high durability.