LAUSR

Abstract This work intended to give a comprehensive overview of the atomic ordering dependence of magnetic and magneto-transport properties for polycrystalline Fe3Si films on Si(111) substrates by inserting the MgO buffer layer between them. X-ray diffraction results display that the single phase polycrystalline Fe3Si film fulfilling fundamental reflections, B2-Fe3Si film and D03-Fe3Si film are acquired. Scanning electron microscopy images present the distribution of the particles dispersed and embedded in the films, resulting in rough surface. The Ms value increases and Hc value decreases with the improvement of structural and chemical order. The highly ordered D03-Fe3Si film has the highest Ms value of 610∼657 emu cm–3, and the lowest Hc value of 81∼93 Oe. Fe3Si films characterize metallic behavior and the resistivity declines with the improvement of atomic ordering. The phonon contribution governs the resistivity in the high temperature range and the electron-electron scattering and anomalous single magnon scattering mechanisms are available at the low temperature region of ∼30 K to 100 K and below ∼30 K, respectively. The analysis of anomalous Hall effect demonstrates that Berry curvature dominates the anomalous Hall effect via a proper scaling law. The enhancement of intrinsic anomalous Hall effect contribution is due to the impact of the improvement of structural and chemical order on the band structure/Berry curvature modifications, accordingly affecting the intensity of spin-orbit coupling, whereas the extrinsic contributions behave in opposite manner.