Abstract Atomically flat MnSi films were fabricated on Si(1 1 1)-7 × 7 reconstructed surface by molecular beam epitaxy(MBE). Both scanning tunneling microscopy (STM) images and low energy electron diffraction (LEED) patterns demonstrate a… Click to show full abstract
Abstract Atomically flat MnSi films were fabricated on Si(1 1 1)-7 × 7 reconstructed surface by molecular beam epitaxy(MBE). Both scanning tunneling microscopy (STM) images and low energy electron diffraction (LEED) patterns demonstrate a well-defined ( 3 × 3 )R30o structure reconstruction. A thickness-driven metal–semiconductor transition in MnSi ultrathin films was observed with decreasing the thickness down to 6 ML (monolayers). The temperature dependence of the resistance and the negative magnetoconductivity suggest the MnSi ultrathin films with thickness lower than 6ML exhibit weak anti-localization (WAL) of two-dimensional (2D) electron systems. This finding that not only advances our understanding of the mechanism of thickness-driven metal–semiconductor transition, but also provides a new strategy to use ferromagnetic semiconductor as spin injector in spintronic devices.
               
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