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Electric field dependence of dc conductivity in As2Te3 (in) thin films

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Abstract The time evolutions of transient current data for As2Te3(In) thin films were measured at different electric fields for the dc voltages of 0.001 V, 0.002 V, 0.005 V, 0.01 V, 0.1 V, 0.5 V and… Click to show full abstract

Abstract The time evolutions of transient current data for As2Te3(In) thin films were measured at different electric fields for the dc voltages of 0.001 V, 0.002 V, 0.005 V, 0.01 V, 0.1 V, 0.5 V and 1 V at room temperature (296 K). Transient current was analyzed by means of time series analysis in order to identify different conduction regimes. The maximal Lyapunov exponents for the transient currents were calculated. Positive maximal Lyapunov exponents reflected electric field dependence with positive Lyapunov exponents. Existence of a positive Lyapunov exponent means sensitive dependence on initial conditions and As2Te3(In) is known to have memory effects hence different initial conditions for each dc current measurement. Detrended Fluctuation Analysis was utilized to characterize the behavior of dc current time series which is invariant to initial conditions. Detrended Fluctuation Analysis identified three different conduction regimes with multiple conduction mechanisms.

Keywords: as2te3 thin; thin films; field dependence; dependence; electric field

Journal Title: Journal of Non-Crystalline Solids
Year Published: 2019

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