LAUSR

Abstract Ab initio magnetic and optical properties of group IV elements (carbon (C) and silicon (Si)) decorated free standing (FS) buckled germanene systems have been employed theoretically. Our study elucidates that, decoration of these elements in proper sites with suitable concentrations form dynamically stable configurations. Band structure is modified due to decoration of these atoms in Ge-nanosheet and pristine semi-metallic germanene undergoes to semiconductors with a finite amount of bandgap. Interestingly, this bandgap value meets closely the requirement of gap for field effect transistor (FET) applications. Moreover, significant magnetic moment is induced in non-magnetic germanene for C decorated structure and ground state in anti-ferromagnetic in nature for this structure. Along with magnetic property, optical properties like dielectric functions, optical absorption, electron energy loss spectra (EELS), refractive index and reflectivity of these systems have also been investigated. Maximum number of plasma frequencies appear for Si decorated configuration considering both parallel and perpendicular polarizations. In addition, birefringence characteristics of these configurations have also been studied as it is an important parameter in various applications of optical devices, liquid crystal displays, light modulators etc.