LAUSR

Abstract Layered GaSe is an important binary semiconductor because of its anisotropic crystallography characteristics, wide band gap and attractive optical and electrical properties. Here, we report the self-catalytic growth of GaSe nanobelts via a simple chemical vapor deposition method. The quality of the as-grown nanobelts have been confirmed by transmission electron microscope and photoluminescence spectra. The field-effect transistors based on these individual GaSe nanobelts have been fabricated and show p-type semiconducting behaviors and on-off ratio of 106. The GaSe nanobelts not only show good responsivity of 164.4 A W−1, but also exhibit excellent stability and reliability, which are superior to their bulk counterparts. These results make GaSe nanobelt a promising optoelectronic material in integrated electronic/optoelectronic devices.