LAUSR

Abstract By performing first-principle transport calculations, we propose that lateral heterostructures of zigzag phosphorene nanoribbons (ZPNRs) with the different passivated edges, can represent a powerful platform for the high performance field-effect transistors (FETs). The ZPNR with H-passivated edge is a semiconductor with a band gap of 1.39 eV. However, the ZPNRs with zigzag edges and cliff edges all exhibit the metallic characters. Two 5 nm Schottky barrier FETs consisting of H-passivated ZPNR and unpassivated ZPNRs with zigzag or cliff edges all can overcome the short channel effect. More importantly, the 5 nm Schottky barrier FET consisting of H-passivated ZPNR and unpassivated ZPNRs with cliff edge at a supply voltage of 0.64 V exhibits ION/IOFF ratio larger than 103, which satisfy the requirements of the high-performance transistor outlined by the ITRS (International Technology Roadmap for Semiconductors). Therefore, the transistor model of ZPNRs in this paper provides a valuable idea for the design of short channel transistors in the future.