Abstract Al concentration dependence of the crystal structure on Ca3Ta(Ga1-xAlx)Si2O14 (CTGAS) piezoelectric single crystals were investigated by X-ray crystal structure analysis. O(2)-Si-O(2) and Si-O(2)-(Ga,Al) bond angles systematically increased with increasing… Click to show full abstract
Abstract Al concentration dependence of the crystal structure on Ca3Ta(Ga1-xAlx)Si2O14 (CTGAS) piezoelectric single crystals were investigated by X-ray crystal structure analysis. O(2)-Si-O(2) and Si-O(2)-(Ga,Al) bond angles systematically increased with increasing Al concentration, and the result suggests that the increase of structural anisotropy by the Al substitution is attributable to the planarization of the O(2)-Si-O(2)-(Ga,Al). In addition, (Ga,Al)-O(2), (Ga,Al)-O(3) and Ca-O(1) bond lengths systematically decreased with increasing the Al substitution. The cation shift of the Si and (Ga,Al) ions out of center from the barycenter of the oxygen coordination environment decreased with increasing Al concentration.
               
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