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Abstract Single-phase polycrystalline bismuth oxysulfate, Bi2O2SO4, has been prepared via low-temperature reaction between Bi2O2CO3 and (NH4)2SO4. The compound is monoclinic (C2/m, a = 14.1659(4) A, b = 4.2344(1) A, c = 8.2100(2) A, β = 106.7201(8)°, V = 471.65(2) A3)… Click to show full abstract
Abstract Single-phase polycrystalline bismuth oxysulfate, Bi2O2SO4, has been prepared via low-temperature reaction between Bi2O2CO3 and (NH4)2SO4. The compound is monoclinic (C2/m, a = 14.1659(4) A, b = 4.2344(1) A, c = 8.2100(2) A, β = 106.7201(8)°, V = 471.65(2) A3) and isostructural to isoelectronic Pb2F2SO4 and to isolobal Ln2O2SO4. Upon heating, it decomposes at ~550 °C into the Bi28O32(SO4)10 which is stable until ~775 °C. DFT calculations predict it to be a wide-gap semiconductor.
Journal Title: Journal of Solid State Chemistry
Year Published: 2020
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