Abstract The sensitivity of tin sulphide thin films and in turn their ability to generate charge carriers on exposure to light is intimately connected to the residual strain in the… Click to show full abstract
Abstract The sensitivity of tin sulphide thin films and in turn their ability to generate charge carriers on exposure to light is intimately connected to the residual strain in the film resulting from film fabrication. These strains lead to the formation of traps within the band-gap of the films which upon excitation releases trapped charge carriers for conduction.
               
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