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Abstract Physical vapor transport growth of Bi2Te3 thin films from elemental Bi and Te sources in high vacuum is presented. Three different kinds of substrates were used: Si (1 0… Click to show full abstract
Abstract Physical vapor transport growth of Bi2Te3 thin films from elemental Bi and Te sources in high vacuum is presented. Three different kinds of substrates were used: Si (1 0 0), Si (1 1 1) and sapphire (0 0 1). Structural and morphological properties of the films were investigated by scanning electron microscopy, energy dispersive and Raman spectroscopies, high-resolution x-ray diffraction and atomic force microscopy. In optimal conditions, all the films showed preferential orientation with the c-plane perpendicular to the growth direction, however the a-plane orientation was found to be clearly dependent on the substrate used: samples grown on sapphire grew coherently with the substrate following a spiral growth mechanism in a pyramidal structure.
Journal Title: Materials Chemistry and Physics
Year Published: 2017
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