LAUSR

Abstract Our aim in the present research work is to investigate the crystallization kinetics and phase transformation studies in Se85In15-xSbx semiconductor. DSC measurements were done at constant heating rates of 5, 10, 15, 20 and 25 K/min for Se85In15-xSbx alloys. The glass transition (Tg), on-set crystallization (Tc) and peak crystallization (Tp) temperature were found to be increases with heating rate for all samples. The activation energy for glass transition (ΔEg) and crystallization (ΔEc) were calculated by different approaches and found to be nearly identical. Thin films of Se85In15-xSbx alloys were prepared by the thermal evaporation technique and the effect of thermal annealing on optical properties were discussed by means of optical absorption measurements. The optical band gaps were found to decrease with annealing temperature. This decrease in optical band gap can be associated with phase change in Se85In15-xSbx alloys from amorphous to crystalline phase.