LAUSR

Abstract Structures based on tin dioxide nanowires were grown on silicon substrates by catalyst-free physical vapor deposition. The effect of growth conditions on properties of S n O 2 nanowire (NW) was studied. Analytical model of the formation functional tin dioxide nanowires by physical vapor deposition was developed. Known mathematical models of nanowires formation are based on the catalytic mechanism of growth and they have a significant disadvantage as there is a large number of experimental parameters which are difficult to determine. In addition, the model equations have only numerical solution and this makes the comparison of theoretical and experimental results difficult. Therefore the development of analytical model which describes influence of technological parameters on geometric characteristics of formed 1D structures is extremely important. Such a model could be useful for optimization of technological parameters of growth of nanowires with the given properties. The key feature of the proposed model is self-consistent relationship between the radial, vertical growth rate and shape of growing nanowires.