LAUSR

Abstract A new “n-p” heterojunction type based on TiO2 (n-type) and CuMnO2 (p-type) was fabricated for the first time using three different methods for layer-by-layer deposition: (1) Au films on glass deposited by sputtering; (2) TiO2 film on Au deposited by Doctor-Blade, and (3) finally CuMnO2 film on TiO2 by spin-coating. The structural and morphological characteristics of the CuMnO2, TiO2 films were investigated by XRD and SEM/EDX techniques, and the phase stability was confirmed after the performed thermal treatments. The Mott-Schottky measurement of the double-layered composite G-Au-TiO2-CuMnO2 was performed for confirming the “n-p” junction formation. The electrical parameters were investigated by I-V measurements exhibiting nonlinear characteristics of the “n-p” heterojunction, and the ideality factor ~4.1 was calculated using the I–V curve fitting. The electrical resistivity measurements show a slight decrease in the resistivity function of temperature.