LAUSR

Abstract CsSn1−xPbxI3 (0.0 ≤ x ≤ 1.0) powders were prepared by self-organization process in aqueous solutions. After annealing in nitrogen (T = 270 °C, t = 8 h) the orthorhombic B-γ-CsSnI3 crystalline structure (space group Pnma) for 0.0 ≤ x ≤ 0.1 is observed. For x ≥ 0.3, the X-ray pattern resulted very similar to CsPbI3 orthorhombic phase. At T 550 °C (t = 1 h) additional reflections of Cs2SnI6 are detected. In air (T = 150 °C, t = 8 h) cubic Cs2SnI6 phase (x = 0.0), CsPbI3–like phase (x = 0.1, x = 0.3) and lead oxide(s) (x = 1.0) are observed. Stab-like crystallites with polyhedral geometry (nitrogen) and coarse particles, with flat surface, in air are observed. Direct semiconducting behavior of the B-γ-CsSnI3 phase, with absorption edge values over 1 μm is detected. The photoluminescence (PL) emission profiles (λexc = 500 nm) showed major PL-events over 1 μm range. Films with semiconducting behavior were fabricated.