LAUSR

Abstract In this paper, electrophoretic method (EPD) is used to deposit 40 nm gold nano-particles (GNPs) on atomic layer deposited (ALD) grown oxides. Ultra-High Resolution Scanning Electron Microscopy (HRSEM) has been used to study the distribution of gold nano-particles on both Al 2 O 3 and HfO 2 thin films as a function of dipping time. The results show better distribution and mechanical adhesion of GNPs on top of HfO 2 compared to Al 2 O 3 . Additionally, metal-oxide-semiconductor (MOS) structures with GNPs embedded within the HfO 2 layers are fabricated. The distribution and coverage of the GNPs are analyzed using hysteresis loop of capacitance-voltage measurements at (1.0 MHz) and by quantifying the threshold voltage shift (ΔVt). Moreover, the distribution of the GNPs as function of dipping time is discussed in terms of the measured ΔVt. The results show an increase in ΔVt with longer dipping time followed by a drop in the ΔVt. Moreover, the Vt shift vs. dipping time indicates changes in the electrophoretic mobility behavior and the final distribution of GNPs on the surface of the HfO 2 .