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Abstract Variable range hopping mechanism of Mott type is observed for the first time in two different temperature ranges between 10 K and 65 K in the ordered defect compound n-CuIn3Se5. Analysis… Click to show full abstract
Abstract Variable range hopping mechanism of Mott type is observed for the first time in two different temperature ranges between 10 K and 65 K in the ordered defect compound n-CuIn3Se5. Analysis of magnetic field dependence of positive magnetoresistance up to 27 T that has been made at several temperatures up to 55 K, shows B2 and B1/3 behavior in low and high field regions. This is in good agreement with the theory of Shklovskii-Efros for hopping conduction in lightly doped semiconductors. The field dependence of the localization temperature To and localization length ξ is discussed.
Journal Title: Materials Research Bulletin
Year Published: 2017
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