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Abstract ReS2 flakes were grown through a vacuum vapor transport method without additional carrier gas during the reaction of S and NH4ReO4 precursors. With the pre-oxidation treatment on SiO2/Si substrate,… Click to show full abstract
Abstract ReS2 flakes were grown through a vacuum vapor transport method without additional carrier gas during the reaction of S and NH4ReO4 precursors. With the pre-oxidation treatment on SiO2/Si substrate, we successfully suppressed the out-of-plane growth of ReS2 crystal in a large extent to obtain a larger area ReS2 flake. Raman and transmission electron microscopy (TEM) measurements indicate the excellent crystalline quality. This work demonstrates the innovations of vacuum vapor transport growth and significant influence of substrate oxidation treatment in promoting the in-plane growth of ReS2 crystal.
Journal Title: Materials Research Bulletin
Year Published: 2019
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